| PART |
Description |
Maker |
| AS7C256 AS7C256-10 AS7C256-10JC AS7C256-10PC AS7C2 |
ECONOLINE: RSZ/P - 1kVDC & 2kVDC Isolation- UL94V-0 Package Material- No Heatsink Required- No Extern. Components Required- Toroidal Magnetics- ContinuousShort Circuit Protection ( /P-Suffix)
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 35 ns, PDSO28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 10 ns, PDSO28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 25 ns, PDSO28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 12 ns, PDSO28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 12 ns, PDIP28
High Performance 32Kx8 CMOS SRAM 高性能32Kx8 CMOS SRAM
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 10 ns, PDIP28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 25 ns, PDIP28
|
ETC[ETC]
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor, Corp.
Alliance Semiconductor ...
|
| CS101 |
Standard Cell
|
Fujitsu Limited
|
| UPD94154GD-202-5BB |
Standard Cell Array
|
ETC
|
| CS91 |
Standard cell array
|
Fujitsu Limited
|
| JS28F128P30TF75A JS28F640P30TF75A |
Numonyx Axcell P30-65nm Flash Memory
Numonyx? Axcell P30-65nm Flash Memory
|
Micron Technology
|
| JS28F256P30TFA |
Micron Parallel NOR Flash Embedded Memory (P30-65nm)
|
Micron Technology
|
| TF-GENE-9655-A10 |
3.5 SubCompact Board With Intel Core 2 Duo/ Celeron M (65nm) Processor
|
AAEON Technology
|
| ATC35 |
ATC35 Summary [Updated 1/03. 14 Pages] The ATC35 Cell-based ASIC (CBIC) family features a comprehensive library of 0.35-micron standard logic and I/O
A comprehensive library of 0.35-micron standard logic and I/O cells designed to operate with a supply voltage of 3.3V /- 0.3V
|
ATMEL Corporation
|
| P4C198L-35CMB P4C198L-45PMB P4C198L-35LMB P4C198L- |
ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS 16K X 4 STANDARD SRAM, 35 ns, CDIP24
ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS 超高6K的4静态CMOS五羊
ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS 16K X 4 STANDARD SRAM, 35 ns, CQCC28
ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS 16K X 4 STANDARD SRAM, 25 ns, CQCC28
ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS 16K X 4 STANDARD SRAM, 25 ns, CDIP24
ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS 超高16K的4静态CMOS五羊
Automotive Relays; V23072A1061A303 ( Tyco Electronics ) 超高6K的4静态CMOS五羊
ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS 超高6K的4静CMOS五羊
ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS 16K X 4 STANDARD SRAM, 15 ns, CDIP24
ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS 16K X 4 STANDARD SRAM, 20 ns, CDIP24
ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS 16K X 4 STANDARD SRAM, 20 ns, CQCC28
|
Pyramid Semiconductor, Corp.
|
| OB33 |
OB33 is a 4.0 mA output pad cell, 0.6 um CMOS
|
ams AG
austriamicrosystems AG
|
| PC28F256P30BFA JS28F256P30BFE PC28F256P30BFE JS28F |
Micron Parallel NOR Flash Embedded Memory (P30-65nm)
Micron Parallel NOR Flash Embedded Memory (P30-65nm)
|
Micron Technology
|
| LV51144T |
CMOS IC 1-Cell Lithium-Ion Battery Protection IC
|
Sanyo Semicon Device
|
